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1214gn - 750v datasheet l- band radar output stage gan power transistor downloaded from: http:///
l - band radar output stage gan power transistor 2 microsemi makes no warranty, representation, or guarantee reg arding the information contained herein or the suitability of it s products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the a pplication or use of any product or circuit. the products sold hereunder and any other produc ts sold by microsemi have been subject to limi ted testing and should not be used in conjunction with mission - critical equipment or applications. any performance specifications are believed to be reliable but are not verified, and buyer mus t conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end - products. buyer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the buyers responsibilit y to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder i s provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the b uyer. microsemi does not grant, explicitly or implicitly, to an y party any patent rights, licenses, or any other ip rights, whether wi th regard to s uch information itself or anything described by such information. information provided in this document is proprietary to microsemi, and microsemi reserves the right to make any changes to the information in this document or to any products and servic es at any time without notice. about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive por tfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. products incl ude high - performan ce and radiation - hardened analog mixed - signal integrated circuits, fpgas, socs and asics; power management produc ts; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processin g devices; rf solution s; discrete components; enterprise storage and communication solutions, security technologies and scalable anti - tamper products; ethernet solutions; power - over - ethernet ics and midspans; as well as custom design capabilities and services. mic rosemi is head quartered in aliso viejo, calif., and has approximately 4,800 employees globally. learn more at www.microsemi.com . ?2016 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered trademarks of microsemi corporation. all other trademarks and service marks are the pr operty of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713 - 4113 outside the usa: +1 (949) 380 - 6100 sales: +1 (949) 380 - 6136 fax: +1 (949) 215 - 4996 e- mail: sales.support@microsemi.com www.microsemi.com downloaded from: http:///
l - band radar output stage gan power transistor 3 revision history 1.1 r evision 1.0 revision 1.0 was the first publication of this document. downloaded from: http:///
l - band radar output stage gan power transistor 4 contents revision history .............................................................................................................................. 3 1.1 revision 1.0 ................................................................................................................................................ 3 2 product overview .................................................................................................................... 7 2.1 applications ............................................................................................................................................... 7 2.2 key features ............................................................................................................................................... 7 3 electrical specifications ............................................................................................................ 8 3.1 absolute maximum ratings ....................................................................................................................... 8 3.2 electrical characteristics at 25 c ............................................................................................................... 8 3.3 functional characteristics at 25 c ............................................................................................................ 8 3.4 typical broadband performance data (300 s, 10% pulsing) .................................................................... 9 3.5 typical transistor performance over temperature .................................................................................. 10 4 transistor impedance information ......................................................................................... 11 5 transistor test information .................................................................................................... 12 5.1 transistor test circuit diagram ................................................................................................................ 12 6 package outline and pin information .................................................................................... 13 6.1 55 - q03 common source package dimensions and pin information ....................................................... 13 downloaded from: http:///
l - band radar output stage gan power transistor 5 list of figures figure 1 case outline 55 - q03 common source ........................................................................................................... 7 figure 2 typical broadband performance data graphs ............................................................................................... 9 figure 3 typical transistor performance over temper ature .................................................................................... 10 figure 4 impedance definition ................................................................................................................................... 11 figure 5 transistor test circuit .................................................................................................................................. 12 figure 6 55 - q03 package dimension and pin information ........................................................................................ 13 downloaded from: http:///
l - band radar output stage gan power transistor 6 list of tables table 1 absolute maximum ratings ............................................................................................................................ 8 table 2 typical electrical characteristics at 25 c ........................................................................................................ 8 table 3 typical functional characteristics at 25 c ...................................................................................................... 8 table 4 typical broadband performance data (300 s, 10% pulsing) ......................................................................... 9 table 5 1214gn - 750v component list ...................................................................................................................... 12 table 6 55 - q03 package dimensions ......................................................................................................................... 13 downloaded from: http:///
l - band radar output stage gan power transistor 7 2 product overview the 1214gn - 750v is an internally matched, common source, class ab gan on sic hemt transistor c apable of providing a typical power gain of over 17 db, 750 w minimum of pulsed rf output power at 300 s pulse width, and 10% long term duty cycle across the 1200 to 1400 mhz band. the transistor has internal pre - match for optimal performance and it is specifically designed for l - band radar applications. it utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. export classification: ear - 99 . figure 1 case outline 55 -q 03 common source 2.1 applications the 1214gn - 750v transistor is specifically designed for l - band radar applications. 2.2 key features the following are the key features of the 1214gn - 750v gan t ransistor: ? 1200 C 1400 mhz, 750 w p ulsed o utput p ower, 300 s 10% p ulsi ng ? common s ource , class ab, 50 v b ias voltage ? high e fficiency: >55% a cross the f requency band ? extremely compact s ize ? high p ower g ain: >17 db ? excellent g ain f latness ? idea l for l - band radar applications ? utilizes all - gold metallization and eutectic die attach for highest reliability ? 50 in /o ut lumped element , very small footprint , plug -and- play pallets available downloaded from: http:///
l - band radar output stage gan power transistor 8 3 electrical specifications the following table shows the absolute maximum ratings at 25 c unless otherwise specified. 3.1 absolute maximum ratings table 1 absolute maximum ratings rating value units max imum power d issipation device d issipation at 25 c 1466 w maximum v oltage and c urrent drain - source v oltage (v dss ) 150 v gate - source v oltage (v gs ) C 8 to 0 v maximum t emperatures storage t emperature (t stg ) C 55 to 125 c operating j unction t emperature 200 c 3.2 e lectrical characteristics at 25 c the following table shows the typical electrical characteristics at 25 c. table 2 typical electrical characteristics at 25 c symbol characteristics test conditions min typ max units p out output p ower freq = 1200, 1300, 1400 mhz 750 w g p power g ain p out = 750 w, freq = 1200, 1300, 1400 mhz 17.2 db ? d drain e fficiency p out = 750 w, freq = 1200, 1300, 1400 mhz 55 62 % dr droop p out = 750 w, freq = 1200, 1300, 1400 mhz 0.8 db vswr -t load m ismatch t olerance p out = 750 w, freq = 1400 mhz 3:1 ? jc junction - case t hermal r esistance 300 s , 10% duty cycle 1.25 c/w bias condition: v dd = 50 v, i dq = 125 ma average current (v gs = C 2.0 to C 4.5 v typical) with constant gate bias 3.3 functional characteristics at 25 c table 3 typical functional characteristics at 25 c symbol characteristics test conditions min typ max units i d(off) drain leakage current v gs = C8 v, v d = 150 v 40 ma i g(off) gate leakage current v gs = C8 v, v d = 0 v 10 ma downloaded from: http:///
l - band radar output stage gan power transistor 9 3.4 t ypical broadband performance data (300 s, 10% pulsing) table 4 typical broadband performance data (300 s, 10% pulsing) frequency p in (w) p out (w) p d (a) i rl (db) ? d (%) g p (db) droop (db) 1200 mhz 14.1 827 2.80 C9.2 61.5 17.68 0.5 1300 mhz 14.1 814 2.69 C9.5 63.1 17.61 0.4 1400 mhz 14.1 803 2.61 C10.7 64.2 17.55 0.3 figure 2 typical broadband performance data graphs downloaded from: http:///
l - band radar output stage gan power transistor 10 3.5 typical transistor performance over temperature the following figure shows the transistor performance over tem perature. figure 3 typical transistor performance over temperature downloaded from: http:///
l - band radar output stage gan power transistor 11 4 t ransistor impedance information the following diagram shows the transistor impedance information f or 1 214 gn - 750v . figure 4 impedance definition input matching network output matching network g s d z s o ur ce z l oad 50 ? 50 ? note : z s o ur ce is looking into the input circuit z l oad is looking into the output circuit for information about source and load impedances for 1214gn - 750v , contact your microsemi representative. downloaded from: http:///
l - band radar output stage gan power transistor 12 5 t ransistor test i nformation 5.1 transistor test circuit diagram figure 5 transistor test circuit the board material is roger duroid 6010lm at 25 mil thick; r = 10.2 . the following table lists the components for 1214gn - 750v . table 5 1214gn - 750v component list item description value c1 atc , 100 a size 100 pf c2 atc , 800b size 82 pf c3 1 atc , 200 b size 100,000 pf c4 1 cer cap 200 v x7r 1206 size 1000 pf c5 1 atc , 800b size 100 pf c6 electrolytic cap (63 v) 12,000 f r1 chip resistor size 0805 40.5 r2 chip resistor size 0805 5.1 l rf choke , 20 awg copper wire solder on top l = 1350 mil 1. two of these are needed downloaded from: http:///
l - band radar output stage gan power transistor 13 6 p ackage outline and p in information the 1214gn - 750v transistor is available in the 55 - q03 common source outline. 6.1 55- q03 common source package dim ension s and p in information figure 6 55 - q03 package dimension and pin information pin 1 = drain, pin 2 = source, pin 3 = gate table 6 55 - q03 package dimensions dim millimeters tol (mm) inches tol (in.) a 34.030 0.250 1.340 0.010 b 9.780 0.250 0.385 0.010 c 3.550 0.190 0.140 0.007 d 12.700 0.130 0.500 0.005 e 1.020 0.130 0.040 0.005 f 1.650 0.130 0.065 0.005 g 0.130 0.030 0.005 0.001 h 19.430 0.760 0.765 0.030 i 45 5 45 5 j 19.810 0.250 0.780 0.030 k 3.300 dia 0.130 0.130 dia 0.005 l 9.400 0.130 0.370 0.005 m 27.940 max 1.100 max downloaded from: http:///

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